Freescale is targeting the mobile infrastructure market with its first RF power amplifier product built using gallium nitride (GaN) technology. The AFG25HW355S is a 350W, high-performance-in-package (HiP), 2:1 asymmetric device operating at 2.3-2.7GHz. Features include 56 dBm peak power, 50% efficiency and 16 dB gain.
Advantages of using GaN technology in power amplifiers include smaller product form factors, low parasitic loss, elevated power density and higher-frequency operation. Potential GaN cellular applications include quasi-linear, high efficiency (Doherty), high-powered pulsed (non-linear) applications, broadband PAs and switch-mode amplifier configurations.
“Freescale’s GaN RF power solutions underscore our technology-agnostic approach to the RF power market,” said Ritu Favre, vice president and general manager of Freescale’s RF Division. “Working with GaN in development since the mid-2000s, we have established an ideal blend of cost-efficiency, performance and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions.”
Potential future applications for Freescale’s GaN products include avionics, radar, ISM and software-defined radio, the company says.