Faced with the dual challenges of higher levels of integration and the competition from low-cost silicon technologies, the gallium arsenide (GaAs) industry is fighting back with new technology innovations, says Strategy Analytics in its newly-released study, 'GaAs MMIC Process Technology Roadmap'. The new processes are BiFET (Bipolar Field Effect Transistor) and BiHEMT (Bipolar High Electron Mobility Transistor), which will enable GaAs device manufacturers to integrate HBT (Heterojunction Bipolar Transistor) power amplifiers onto a single die with HEMT-based switches and other functions.
"BiFET and BiHEMT technologies will enable the development of a future class of products, providing integrated solutions that retain the industry-leading performance offered by GaAs and necessary for next-generation wireless markets," noted Steve Entwistle, VP of Strategy Analytics' Strategic Technologies Practice.
"GaAs is still erroneously perceived by many as an exotic, expensive technology," said Asif Anwar, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. "The reality is that GaAs technologies continue to meet the requirements from cost-sensitive markets, such as cellular handsets and is the most cost-effective technology for markets that require millimetre-wave performance."
"The application of optical lithography for millimeter-wave IC production will significantly enhance the cost-effectiveness of GaAs compared to silicon technology-based offerings, while retaining the benefits of performance and faster time-to-market," he concluded.
