Digi-Key has expanded its line of products from Cree to include a range of Gallium Nitride (GaN) HEMT transistors for general microwave applications.
The devices come in power levels ranging from 10W to 90W and offer high frequency performance to 6GHz. They feature high gain and lower parasitic capacitance within small package footprints. This enables smaller, lighter and more energy efficient systems, often with fewer amplifier components, than required with other microwave transistor technologies.
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